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Home >> Ceramic High Reliability Optocouplers
Ceramic High Reliability Optocouplers

HIGH GAIN OPTOCOUPLERS


Each channel contains a light emitting diode which is optically coupled to an integrated high gain photon detector. The high gain output stage features an open collector output providing both lower saturation voltage and higher signalling speed than a conventional Photo-Darlington optocoupler. The supply voltage can be operated as low as 2.0V without adversely affecting the parametric performance. The High Current Transfer Ratio of the optocouplers makes them ideal for low input current, min 0.5mA, applications.

The radiation immunity of the optocouplers compared to conventional photo transistor optocouplers is due to the shallow depth and small junctions offered by the IC process.

The optocoupler family is also available in various package styles including 6, 8 and 16 pin DIP through hole, 16 pin surface mount DIP flat pack and a 6 Pin leadless ceramic chip carrier. The devices can be purchased with lead bend and plating options.

ISOCOM optocouplers are offered on the basis of similarity of emitter and detector therefore the performance characterization is identical, subject to the limitations of the packages. The wafer die similarities apply to the optocouplers for high reliability screening and radiation testing.
Click here to view our range of High Gain Optocouplers.

HIGH GAIN PHOTON OPTOCOUPLERS


Each channel contains a light emitting diode which is optically coupled to an integrated high speed photon detector. The output of the detector is an open collector Schottky clamped transistor. Internal shields provide a guaranteed common mode transient immunity specification of 1000 V/µs. These optocouplers are for Isolation Voltage applications requiring up to 2500 Vdc.

The optocoupler family is also available in various package styles including 6, 8 and 16 pin DIP through hole, 16 pin surface mount DIP flat pack and a 6 Pin leadless ceramic chip carrier. The devices can be purchased with lead bend and plating options.

ISOCOM optocouplers are offered on the basis of similarity of emitter and detector therefore the performance characterization is identical, subject to the limitations of the packages. The wafer die similarities apply to the optocouplers for high reliability screening and radiation testing.
Click here to view our range of High Gain Photon Optocouplers.

HIGH SPEED OPTOCOUPLERS


These devices are single, dual and quad, hermetically sealed optocouplers. Each channel is composed of an infra-red light emitting diode and a photon detector high speed transistor output. Package styles for these devices include 6 pin, 8 pin, 16 pin flat pack, 6 pin LCC and hybrid 6 pin, with surface mount, butt cut and gull wing options available. Separate connections for the photodiodes and output transistor collectors improve the speed up to a hundred times that of a conventional phototransistor optocoupler by reducing the base-collector capacitance.

The same electrical die, assembly processes and materials are used for each channel of each device shown below. Therefore absolute maximum ratings, recommended operating conditions, electrical specifications and performance characteristics are identical for all units. Any exceptions, due to packaging variations and limitations, are as noted.
Click here to view our range of High Speed Optocouplers.

TRANSISTOR OPTOCOUPLERS


These devices are single, dual and quad, hermetically sealed optocouplers. Each channel is composed of an infra-red emitting diode and a silicon phototransistor. Package styles for these devices include 6 pin, 8 pin, 16 pin flat pack, and hybrid 4 pin, with surface mount, butt cut and gull wing options available.

The same electrical die, assembly processes and materials are used for each channel of each device shown below. Therefore absolute maximum ratings, recommended operating conditions, electrical specifications and performance characteristics are identical for all units. Any exceptions, due to packaging variations and limitations, are as noted.
Click here to view our range of Transistor Optocouplers.

 
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News

Isocom Limited will be exhibiting at RADECS 2013 in Oxford UK from 23rd to 27th September 2013

2013-02-21
RADECS 2013 is an excellent opportunity for us to showcase our range of high reliabilty, radiation tolerant opto-electronic...


Isocom Ltd exhibited at Electronica 2012, November 13-16 2012.

2012-09-14
  Electronica offers you the advantage of thousands of companies from the electronics industry exhibiting from all over the world. They...


Understanding the effects of Radiation on opto-isolators : RADECS 2012

2012-06-19
Radiation causes all manner of problems for optoelectronic components and other integrated circuits, which is why there is an entire...


RADECS2011 - Conference on Radiation Effects on Components and Systems

2011-10-19
Isocom Limited exhibited at RADECS 2011 held this year in Seville during the week ended 23 September 2011. RADECS is a specialist...

 
 
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