4N25 - Product Detail

Circuit and Package

Circuit

Package

Features

2500 Volt Isolation
High DC Current Transfer Ratio
Low Cost Dual-In-Line Package

Description

The 4N25 is an optically coupled isolator. It consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor mounted in a standard 6 pin dual-in-line package

Datasheet

Absolute Maximum Ratings (Ta=25°C)

Storage Temperature	-55°C to +150°C
Operating Temperature	-55°C to +100°C
Lead Soldering Temperature	260°C 1.6mm from case for 10S
Input-to-Output Isolation Voltage	^2500V

Input Diode

Forward DC Current	80mA
Reverse DC Voltage	3V
Peak forward Current	3.0A	1µS p.w. 300 pps
Power Dissipation	100mW	Derate linearly above 25°C at 1.33mW/°C

Output Transistor

Collector-Emitter Voltage	30V	BV_CEO
Emitter-collector voltage	7V	BV_ECO
Collector-base voltage	70V	BV_CBO
Power Dissipation	150mW	Derate linearly above 25°C at 2.0mW/°C

Package

Total Power Dissipation

250mW

Derate linearly above 25°C at 3.3mW/°C

Electro-optical Characteristics

Input Diode Electrical Characteristics

Parameter	Symbol	Test Conditions	Min	Typ	Max	Units
Forward Voltage	V_F	I_F = 10mA			1.5	V
Reverse Current	I_R	V_R= 3.0V			100	mA
Reverse Breakdown Voltage	V_R	I_R= 100mA	3.0			V

Output Detector Electrical Characteristics

Parameter	Symbol	Test Conditions	Min	Typ	Max	Units
Collector-emitter Voltage	BV_CEO	I_C= 1mA	30			V
Emitter-collector Voltage	BV_ECO	I_E= 100mA	7			V
Collector-base Voltage	BV_CBO	I_C= 100mA	70			V
Collector-emitter Dark Current	I_CEO	V_CE= 10V, I_B= 0			50	nA
Collector-base Dark Current	I_CBO	V_CB= 10.0V, I_E= 0			20	nA
Collector-Emitter Capacitance	C_CE	V_CE= 0		10		pF
Collector-Emitter Capacitance	H_FE	V_CE= 5.0V, I_C= 100mA		150		pF

Coupled Electrical Characteristics

Parameter	Symbol	Test Conditions	Min	Typ	Max	Units
DC Current Transfer Ratio	CTR	I_F = 10mA, V_CE = 10V, I_B= 0	20	50		%
Input-to-Output Isolation Resistance	R_ISO	V_IO= 500V	10¹¹			Ω
Collector-Emitter Saturation Voltage	V_CE(Sat)	I_F= 50mA, I_C= 2mA			0.5	V
Capacitance Input to Output	C_IO	F= 1Mhz		0.6		pF
Output Rise Time	T_R	V_CC= 10V, I_C= 2mA, R_L= 100Ω		2.0		mS
Output Fall Time	T_F			2.0		mS
Input-to-Output Isolation Voltage			2500			V

Reliability and Approvals

ISO9001:2008