Performance guaranteed over -55°C to +125°C temperature range
High current transfer ratio
5000V electrical isolation
Description
These devices are dual optocouplers. Each channel is composed of a Gallium Arsenide infra-red emitting diode and a silicon phototransistor. Package styles for these devices are 8 pin with surface mount, butt cut and gull wing options available. The same electrical die, assembly processes and materials are used for each channel of each device shown above Therefore absolute maximum ratings, recommended operating conditions, electrical specifications and performance characteristics are identical for all units. Any exceptions, due to packaging variations and limitations, are as noted.
Datasheet
Absolute Maximum Ratings (Ta=25°C)
Storage Temperature
-55°C to + 150°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
260°C
Input-to-Output Isolation Voltage
± 5000 V
Input Diode
Forward DC Current
60 mA
Reverse DC Voltage
6 V
Peak forward Current
1 A
Power Dissipation
70 mW
Output Transistor
Collector-Emitter Voltage (BVCEO)
300V
Emitter-base Voltage
6 V
Collector-Base Voltage (BV CBO)
300V
Power Dissipation
300mW
Package Total Power Dissipation
350 mW
Electro-optical Characteristics
Input Diode Electrical Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Forward Voltage
VF
IF = 10mA
-
1.2
1.5
V
Reverse Breakdown Voltage
VR
IR = 10mA
6
-
-
V
Reverse Current
IR
VR = 6.0V
-
-
10
µA
Output Detector Electrical Characteristics
Collector-Emitter Breakdown Voltage
(See note 1 below)
BVCEO
IC = 1mA, 1F = 0
300
350
-
V
Collector-Base Breakdown Voltage
(See note 1 below)
BVCBO
IB = 0.1mA, IF = 0
300
-
-
V
Emitter-Base Breakdown Voltage
BVECO
IE = 100mA, IF = 0
6
-
-
V
Collector-Emitter Leakage Current
ICEO
VCE = 100V, IF = 0
-
-
100
nA
Coupled Electrical Characteristics
DC Current Transfer Ratio
IC/IF
IF = 1mA, VCE = 2V, IB = 0
500
1000
-
%
Collector-Emitter Saturation Voltage
VCE
(Sat)
IF = 10mA, IC = 100mA
-
-
1.2
V
Input to Output Capacitance
CIO
VIO = 0, f = 1mhz (See note 2 below)
-
0.6
-
pF
Input to Output Resistance
RIO
VIO = 500V (See note 2 below)
1011
-
-
Input-to-Output Isolation Voltage
VIO
(See note 2 below)
5000
-
-
V
Output Rise Time
tr
VCE = 2 V, IC = 20mA
-
130
250
µS
Output Fall Time
tf
RL = 100
-
30
70
µS
Cut-off-frequency
fc
VCC = 2V, If = 20mA,
RL = 100
1
4
-
khz
Notes
1. BVCEO and BVCBO can be selected to suit customer specifications.
2. Measured between input when leads 1, 2 and 3 are shorted together, and output when leads 4, 5 and 6 are shorted together.
3. A higher CTR can be selected to suit customer specification as a standard part.
Exhibitions
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