ISM03NT2-50

Power MOSFETs

ISM03NT2-50 Schematic

ISM03NT2-50 Features

30V/50A, RDS(ON) = 9mΩ @ VGS=10V

Super high density cell design for extremely low RDS(ON)

Exceptional On-Resistance and maximum DC current capability

Faster Switching Speeds

Designed for TID, DD & SEU

Full Military temperature range -55°C to +125°C


Description

The ISM03NS0-50 is a 30V/50A N-channel logic enhancement mode power field effect transistor, which is produced using super high cell density DMOS technology.

The ISM03NS0-50 has been designed specifically to improve the overall efficiency of DC-DC converters using either synchronous or conventional switching PWM controllers.  It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

The ISM03NS0-50 is available in a TO-205AF (TO-39) metal can package, with solder dip option available.

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Part: ISM03NT2-50

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