30V/50A, RDS(ON) = 9mΩ @ VGS=10V
Super high density cell design for extremely low RDS(ON)
Exceptional On-Resistance and maximum DC current capability
Faster Switching Speeds
Designed for TID, DD & SEU
Full Military temperature range -55°C to +125°C
The ISM03NS0-50 is a 30V/50A N-channel logic enhancement mode power field effect transistor, which is produced using super high cell density DMOS technology.
The ISM03NS0-50 has been designed specifically to improve the overall efficiency of DC-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
The ISM03NS0-50 is available in an TO-257AA package, with solder dip option available.
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