ISM06NT3-60

Power MOSFETs

ISM06NT3-60 Schematic

ISM06NT3-60 Features

60V/60A, RDS(ON) = 12mΩ@ VGS=10V

Super high density cell design for extremely low RDS(ON)

Exceptional On-Resistance and maximum DC current capability

Faster Switching Speeds

Designed for TID, DD & SEU

Full Military temperature range -55°C to +125°C.

Same footprint as IRHM7054, IRHM7064 & IRHM57064.


Description

The ISM06NT3-60 is an N-Channel logic enhancement mode power field effect transistors which are produced using super high cell density DMOS technology. The ISM06NT3-60 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

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Part: ISM06NT3-60

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