ISM10NT3-65

Power MOSFETs

ISM10NT3-65 Schematic

ISM10NT3-65 Features

100V/65A, RDS(ON) = 18mΩ@ VGS=10V

Super high density cell design for extremely low RDS(ON)

Exceptional On-Resistance and maximum DC current capability

Faster Switching Speeds

Designed for TID, DD & SEU

Full Military temperature range -55°C to +125°C.

Same footprint as IRHM7150, IRHM7160, IRHM57160,

IRHMJ57160, IRHMK57160, IRHMS57160 &IRHMS67160.


Description

The ISM10NT3-65 is an N-Channel logic enhancement mode power field effect transistors which are produced using super high cell density DMOS technology. The ISM10NT3-65 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

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Part: ISM10NT3-65

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