ISM10NUB-3

Power MOSFETs

ISM10NUB-3 Schematic

ISM10NUB-3 Features

100V/14.4A, RDS(ON) = 310mΩ @ VGS = 10V

Super high density cell design for extremely low RDS(ON)

Exceptional On-Resistance and maximum DC current capability

Faster Switching Speeds

Designed for TID, DD & SEU

Full Military temperature range -55°C to + 125°C



Description

The ISM10NUB-3 is an N-Channel logic enhancement mode power field effect transistor which are produced using super high cell density DMOS technology. The ISM10NUB-3 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

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Part: ISM10NUB-3

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