ISM06PS1-35

Power MOSFETs

ISM06PS1-35 Schematic

ISM06PS1-35 Features

-60V/-35A, RDS(ON) = 35mΩ@ VGS=-10V

Super high density cell design for extremely low RDS(ON)

Exceptional On-Resistance and maximum DC current capability

Faster Switching Speeds

Designed for TID, DD & SEU

Full Military temperature range -55°C to +125°C.


Description

The ISM06PS1-35 is a P-Channel logic enhancement mode power field effect transistors which are produced using super high cell density DMOS technology. The ISM06PS1-35 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

How to buy Request quote Download Datasheet

X

Login

Login to access Documents and the ability to Request a Quote.

Forgot your password?
X

Request quote

Part: ISM06PS1-35

Please give details of your requirements and a member of the team will be in touch.

This website uses cookies to ensure you get the best experience on our website.