-60V/-35A, RDS(ON) = 35mΩ@ VGS=-10V
Super high density cell design for extremely low RDS(ON)
Exceptional On-Resistance and maximum DC current capability
Faster Switching Speeds
Designed for TID, DD & SEU
Full Military temperature range -55°C to +125°C.
Same footprint as IRHYS597034CM, IRHYB597034CM & IRHLYS797034CM
The ISM06PT4-35 is a P-Channel logic enhancement mode power field effect transistors which are produced using super high cell density DMOS technology. The ISM06PT4-35 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
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