4N55

Optocouplers

4N55 Schematic

4N55 Features

Total Ionizing Dose Tested to 1MRad(si)

Displacement Damage Tested to 3 MEV x10¹²

Hermetically Sealed

Withstand Test Voltage up to 2500vdc

16-pin DIP Package

Low Input Requirements

High Speed – Typically 2Mhz


Description

This device is a dual channel, hermetically sealed optically coupled isolator.  Each channel is composed of a Gallium Arsenide infrared emitting diode and a silicon phototransistor.

The 4N55 is being used in environments encountered by space applications. Package styles for this device include a 16-pin DIP package with surface mount and solder dip options available.  These packages have a shield effect to cut off ambient light as they are designed for high density mounting applications.

Therefore absolute maximum ratings, recommended operating conditions, electrical specifications and performance characteristics are identical for all units.  Any exceptions, due to packaging variations and limitations, are as noted in the datasheet.

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Part: 4N55

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