ISOCOM, a leading UK manufacturer in space-grade electronics, introduces new quad N-Channel power MOSFETs to their ever expanding range of radiation-hard optoelectronic and microelectronic components.
In 2019, ISOCOM launched their range of high power MOSFETs based on the proprietary N-Channel and P-Channel SR technology. Today, ISOCOM have further expanded their MOSFET range with ISMQ10ND1-1 and ISMQ10NF1-1 quad channel MOSFETs.
ISMQ10ND1-1 and ISMQ10NF1-1 100V logic enhancement mode power field effect transistors feature extremely low on-state resistance, RDS(ON), of 0.29Ω, a maximum drain current rating of 1.6A, improving thermal efficiency in high power DC-DC converters.
These MOSFETs are contained in lightweight, hermetically sealed ceramic packaging, including – 16-Pin DIP and 16-Pin flatpack packages with solder dip options available.
All ISOCOM MOSFETs are designed and manufactured at their AS9100D and ISO9001:2015 accredited facility and screened in accordance to MIL-PRF-38534 and MIL-PRF19500 to ensure that they are suited for defence, space and aerospace applications.