ISMQ10ND1-1 Features
- Quad channel
- 100V / 1.6A, RDS(on) = 290 mΩ @ VGS = 12V (per channel)
- Super high density cell design for extremely low RDS(on)
- Exceptional on-resistance and maximum DC current capability
- Fast switching speeds
- Full Military temperature range -55°C to +125°C
Description
The ISMQ10ND1-1 is a quad N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS technology. The ISMQ10ND1-1 has been designed specifically to improve the overall efficiency of DC-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(on) and fast switching speed.
The ISMQ10ND1-1 is being used in environments encountered by space applications. It is manufactured in accordance with MIL-PRF-19500 specification. This device is available in 16-pin dual inline package, with optional lead finishes available.
Absolute maximum ratings, recommended operating conditions, electrical specifications and performance characteristics are identical for all units. Any exceptions, due to packaging variations and limitations, are as noted.