100V / 1.6A, RDS(on) = 290 mΩ @ VGS = 12V (Per Channel)
Super high density cell design for extremely low RDS(on)
Exceptional on-resistance and maximum DC current capability
Fast switching speeds
Full Military temperature range -55°C to +125°C
The ISMQ10ND1-1 is a Quad Channel N-Type logic enhancement mode power field effect transistor which are produced using super high cell density DMOS technology. The ISM03NT2-12 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
The ISMQ10ND1-1 is available in a 16-DIP package with solder dip option available.
Absolute maximum ratings, recommended operating conditions, electrical specifications and performance characteristics are identical for all units. Any exceptions, due to packaging variations and limitations, are as noted in the datasheet.
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