ISMQ10NF1-1 Features
- Quad channel
- 100V/1.6A, RDS(ON) = 290mΩ @ VGS = 12V, ID = 1A
- Super high density cell design for low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
- 16 Pin Flatpack package
- Fast switching speeds
Description
The ISMQ10NF1-1 is a quad N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS technology. The ISMQ10NF1-1 has been designed specifically to improve the overall efficiency of DC-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(on) and fast switching speed.
The ISMQ10NF1-1 is being used in environments encountered by space applications. It is manufactured in accordance with MIL-PRF-19500 specification. This device is available in 16-pin Flat Pack package, with optional solder dip finish available.
Absolute maximum ratings, recommended operating conditions, electrical specifications and performance characteristics are identical for all units. Any exceptions, due to packaging variations and limitations, are as noted.