ISM06NUB-1 Features
60V/1A, RDS(ON) = 310mΩ @ VGS=10V
Surface mount UB style package
Super high density cell design for extremely low RDS(ON)
Exceptional On-Resistance and maximum DC current capability
Faster Switching Speeds
Designed for TID, DD & SEU
Full Military temperature range -55°C to +125°C
Description
The ISM06NUB-1 is an N-Channel logic enhancement mode power field effect transistors which are produced using super high cell density DMOS technology. The ISM06NUB-1 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.