ISM10NL1-3 Features
100V/3A, RDS(ON) = 310mΩ@ VGS=10V
Super high density cell design for extremely low RDS(ON)
Exceptional On-Resistance and maximum DC current capability
Faster Switching Speeds
Designed for TID, DD & SEU
Full Military temperature range -55°C to +125°C.
Same footprint as IRHE7110.
Description
The ISM10NL1-3 is an N-Channel logic enhancement mode power field effect transistors which are produced using super high cell density DMOS technology. The ISM10NL1-3 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.