ISM120NS1-19 Features
- 1200 V blocking voltage
- SMD 1.0 package
- Hermetically sealed
- New SiC MOSFET technology
- Full Military temperature range -55°C to +150°C
Description
The ISM120NS1-19 is an N-channel enhancement mode power field effect transistor which is produced using Silicon Carbide (SiC) MOSFET technology. The ISM120NS1-19 has been designed specifically to improve the overall efficiency of DC-DC converters, using either synchronous or conventional switching PWM controllers. This device is resistant to latch-up and has been optimised for low gate charge, low capacitance, ultra-low RDS(ON) & fast switching speeds, The ISM120NS1-19 is available in a SMD 1.0 package, with solder dip option available.
Absolute maximum ratings, recommended operating conditions, electrical specifications and performance characteristics are identical for all units. Any exceptions, due to packaging variations and limitations, are as noted in the datasheet.