ISM20NS0-20 Features
200V/20A, RDS(ON) = 100mΩ @ VGS = 10V
Super high density cell design for extremely low RDS(ON)
Exceptional On-Resistance and maximum DC current capability
Faster Switching Speeds
Designed for TID, DD & SEU
Full Military temperature range -55°C to +125°C
Description
The ISM20NS0-20 is an N-channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS technology. The ISM20NS0-20 has been designed specifically to improve the overall efficiency of DC-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
The ISM20NS0-20 is available in an SMD 0.5 surface mount package, with solder dip option available.