ISM06PT3-35

Power MOSFETs

ISM06PT3-35 Schematic

ISM06PT3-35 Features

-60V/-35A, RDS(ON) = 35mΩ@ VGS=-10V

Super high density cell design for extremely low RDS(ON)

Exceptional On-Resistance and maximum DC current capability

Faster Switching Speeds

Designed for TID, DD & SEU

Full Military temperature range -55°C to +125°C.

Same footprint as IRHM9064.


Description

The ISM06PT3-35 is a P-Channel logic enhancement mode power field effect transistors which are produced using super high cell density DMOS technology. The ISM06PT3-35 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

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Part: ISM06PT3-35

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