ISMD06CL0-1 Features
- Low RDS(on)
- Low Total Gate Charge
- Fast Switching
- Hermetically Sealed
- Light in weight
Description
This device is a dual channel, hermetically sealed logic enhancement mode power field effect transistor which is produced using super high cell density DMOS technology. The device consists of 1 x N-channel die and 1 x P-channel die. The ISMD06CL0-1 has been designed specifically to improve the overall efficiency of DC-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(on) and fast switching speed.
The ISMD06CL0-1 is being used in harsh radiation environments encountered by space applications. The device is available in a LCC-6 package, with solder dip option available.