ISMD06CL0-1 Features
- 60V/0.89A N-Type, RDS(ON) = 750mΩ @ ID = 0.56A, VGS = 4.5V
- -60V/-0.65A P-Type, RDS(ON) = 1.6Ω @ ID = -0.41A, VGS = -4.5V
- Super high density cell design for low RDS(ON)
- Exceptional on-resistance and maximum current capability
- LCC-6 package
- Hermetically sealed
- Replacement part for IRHLUC7670Z4
Description
The ISMD06CL0-1 is a dual channel, hermetically sealed logic enhancement mode power field effect transistor which is produced using super high cell density DMOS technology. The device consists of 1 x N-channel die and 1 x P-channel die. The ISMD06CL0-1 has been designed specifically to improve the overall efficiency of DC-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
The ISMD06CL0-1 is being used in environments encountered by space applications. The device is available in a LCC-6 package, with solder dip option available.
Absolute maximum ratings, recommended operating conditions, electrical specifications and performance characteristics are identical for all units. Any exceptions, due to packaging variations and limitations, are as noted.