ISM06NS0-22 Features
- 60V/22A, RDS(ON) = 30mΩ @ ID = 21A, VGS = 12V
- Super high-density cell design for extremely low RDS(ON)
- Exceptional On-Resistance and maximum DC current capability
- Hermetically sealed
- Designed for TID, DD & SEU
- Full Military temperature range -55°C to +125°C
- Replacement part for IRHNJ57034
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Description
The ISM06NS0-22 is an N-Channel logic enhancement mode power field effect transistor which are produced using super high cell density DMOS technology. The ISM06NS0-22 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.