ISM06NS0-22 Features
60V/22A, RDS(ON) = 39mΩ @ VGS = 4.5V
Super high-density cell design for extremely low RDS(ON)
Exceptional On-Resistance and maximum DC current capability
Faster Switching Speeds
Designed for TID, DD & SEU
Full Military temperature range -55°C to +125°C
Same footprint as IRHLNJ77034 & IRHLNJ77034
Description
The ISM06NS0-22 is an N-Channel logic enhancement mode power field effect transistor which are produced using super high cell density DMOS technology. The ISM06NS0-22 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.