ISM06NS0-60

Power MOSFETs

ISM06NS0-60 Schematic

ISM06NS0-60 Features

60V/60A, RDS(ON) = 115mΩ @ VGS = 10V, ID = 15A

Super high-density cell design for extremely low RDS(ON)

Exceptional On-Resistance and maximum DC current capability

Faster Switching Speeds

Designed for TID, DD & SEU

Full Military temperature range -55°C to +125°C



Description

The ISM06NS0-60 is an N-Channel logic enhancement mode power field effect transistor which are produced using super high cell density DMOS technology. The ISM06NS0-60 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

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Part: ISM06NS0-60

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