ISM06NS0-60 Schematic

ISM06NS0-60 Features

60V/60A, RDS(ON) = 115mΩ @ VGS = 10V, ID = 15A

Super high-density cell design for extremely low RDS(ON)

Exceptional On-Resistance and maximum DC current capability

Faster Switching Speeds

Designed for TID, DD & SEU

Full Military temperature range -55°C to +125°C


The ISM06NS0-60 is an N-Channel logic enhancement mode power field effect transistor which are produced using super high cell density DMOS technology. The ISM06NS0-60 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

How to buy Request quote Download Datasheet



Login to access Documents and the ability to Request a Quote.

Forgot your password?

Request quote

Part: ISM06NS0-60

Please give details of your requirements and a member of the team will be in touch.

This website uses cookies to ensure you get the best experience on our website.