ISM06NS1-35 Features
- 60V/35A, RDS(ON) = 30mΩ @ ID = 35A, VGS = 12V
- Super high density cell design for extremely low RDS(ON)
- Exceptional On-Resistance and maximum DC current capability
- Hermetically sealed
- Designed for TID, DD & SEU
- Full Military temperature range -55°C to +125°C
- Replacement part for IRHN7054
Description
The ISM06NS1-60 is an N-Channel logic enhancement mode power field effect transistor which are produced using super high cell density DMOS technology. The ISM06NS1-60 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.