ISM06NS2-56 Features
- 60V/56A, RDS(ON) = 12mΩ @ VGS = 4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional On-Resistance and maximum DC current capability
- Hermetically sealed
- Designed for TID, DD & SEU
- Full Military temperature range -55°C to +125°C
- Replacement part for IRHLNA77064
- SMD-2.0 package
Description
The ISM06NS2-56 is an N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The ISM06NS2-56 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. The ISM06NS2-56 is available in a SMD-2.0 package, with solder dip option available. Please visit our website or contact us for more information. Absolute maximum ratings, recommended operating conditions, electrical specifications and performance characteristics are identical for all units. Any exceptions, due to packaging variations and limitations, are as noted.