ISM10NT3-45 Features
▪100V/45A, RDS(ON) = 14mΩ @ ID = 45A, VGS = 12V
▪Super high density cell design for low RDS(ON)
▪Exceptional on-resistance and maximum current capability
▪TO-254 package
▪Hermetically sealed
▪Replacement part for IRHMS57160
Description
The ISM10NT3-45 is an N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The ISM10NT3-45 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. The ISM10NT3-45 is available in a TO-254 package, with solder dip option available. Other package styles and configurations are available. Please visit our website or contact us for more information. Absolute maximum ratings, recommended operating conditions, electrical specifications and performance characteristics are identical for all units. Any exceptions, due to packaging variations and limitations, are as noted.