ISM10NT4-20

Power MOSFETs

ISM10NT4-20 Schematic

ISM10NT4-20 Features

100V/22A, RDS(ON) = 45mΩ@ VGS=10V

Super high density cell design for extremely low RDS(ON)

Exceptional On-Resistance and maximum DC current capability

Faster Switching Speeds

Designed for TID, DD & SEU

Full Military temperature range -55°C to +125°C.

Same footprint as IRHY57130CM, IRHYS67130CM,

IRHYB67130CM & IRFY140CM


Description

The ISM10NT4-20 is an N-Channel logic enhancement mode power field effect transistors which are produced using super high cell density DMOS technology. The ISM10NT4-20 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

How to buy Request quote Download Datasheet

X

Login

Login to access Documents and the ability to Request a Quote.

Forgot your password?
X

Request quote

Part: ISM10NT4-20

Please give details of your requirements and a member of the team will be in touch.

This website uses cookies to ensure you get the best experience on our website.