ISM10NT4-20

Power MOSFETs

ISM10NT4-20 Schematic

ISM10NT4-20 Features

100V/20A, RDS(ON) = 42mΩ @ VGS = 12V, ID = 19A

Super high density cell design for extremely low RDS(ON)

Exceptional On-Resistance and maximum DC current capability

Faster Switching Speeds

Designed for TID, DD & SEU

Full Military temperature range -55°C to + 125°C



Description

The ISM10NT4-20 is an N-Channel logic enhancement mode power field effect transistor which are produced using super high cell density DMOS technology. The ISM10NT4-20 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

The ISM10NT4-20 is available in a TO-257AA metal package, with solder dip option available.

Absolute maximum ratings, recommended operating conditions, electrical specifications and performance characteristics are identical for all units.  Any exceptions, due to packaging variations and limitations, are as noted in the datasheet.

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Part: ISM10NT4-20

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