ISM06PS0-21

Power MOSFETs

ISM06PS0-21 Schematic

ISM06PS0-21 Features

  • -60V/-21A, RDS(ON) = 85mΩ @ ID = -13.3A, VGS = -12V
  • Super high density cell design for extremely low RDS(ON)
  • Exceptional On-Resistance and maximum DC current capability
  • Hermetically sealed
  • Replacement part for IRHNJ597034
  • Full Military temperature range -55°C to +125°C

Description

The ISM06PS0-21 is a P-Channel logic enhancement mode power field effect transistor which are produced using super high cell density DMOS technology. The ISM06PS0-21 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

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Part: ISM06PS0-21

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