ISV850-100 Features
- GaAs infrared chip
- 850nm centre optical wavelength
- 4mW VCSEL (IF = 9mA)
- Other configurations available on request
Description
The ISV850-100 is an 850nm Vertical Cavity Surface Emitting Laser Diode (VCSEL) that is characterized by a unique oxide-confined aperture process design and provides stable electro-optical characteristic and high reliability.
The ISV850-100 is available in a UB, TO-46 or TO-56 metal can package which houses a 2D VCSEL that is capable of delivering 4 mW of CW power at room temperature.
For more information about suitable applications for this device, please contact us.